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Effect of Temperature on the Electrical Parameters of Indium Phosphide/ Aluminum Gallium Indium Phosphide (InP/AlGaInP)
.jpg "Original Hitachi 635/638nm HL63133DG 170mW Single mode Orange red laser diode")
Original Hitachi 635/638nm HL63133DG 170mW Single mode Orange red laser diode
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Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes
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Effect of passivation layers on characteristics of AlGaInP ridge waveguide laser diodes - ScienceDirect
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Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence | Semantic Scholar
