Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence | Semantic Scholar
PPT - Improvement of Characteristic Temperature for AlGaInP Laser Diodes PowerPoint Presentation - ID:3337083